• 830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode
  • 830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode
  • 830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode

830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode

Certification: RoHS, CE, ISO
Application: Illumination, Printing, Sensing, Medical
Structure: Through Hole
Wavelength: 830nm
Optical Output Power: 200MW Cw
Can Type: To18-5.6mm
Samples:
US$ 9/Piece 1 Piece(Min.Order)
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Customization:
Diamond Member Since 2015

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Basic Info.

Model NO.
JLD808-200MW
Light Color
Infrared
Threshold Current
35mA Typ.
Life Time
10000 Hours
Reverse Voltage
3V
Operating Current
250mA
Operating Voltage
1.5V
Operating Temperature
-20~+50 Degree
Transport Package
Anti-Static Package
Specification
830nm 200mw laser diode
Trademark
JDSU
Origin
USA
HS Code
85414010
Production Capacity
10000PCS Per Day

Product Description

Features:
1.  200 mW kink-free power
2.  Narrow spectral width
3. High efficiency

830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode
830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode


Laser Characteristics
Parameter Symbol Min. Typ. Max. Unit
CW output power,kink-free  Po - - 200 w
Center wavelength λc  - 830 - nm
Spectral width  Δλ  - 3 5 nm
Slope efficiency ηD = P o/(Iop -Ith )  0.75 0.85 - mW/ mA
Conversion efficiency  η= P o /(Iop V op )  - 30 - %
Emitting dimensions  W x H  - 3 x 1 - µm
Beam Divergence Parallel to the junction θ// - 9 - degree
Beam Divergence Perpendicular to the junction θ⊥  - 30 - degree
Threshold Current Ith - 35 45 mA
Operating Current If - 250 350 mA
Operating Voltage Vop - Forward voltage is typically:Vf = 1.5 V + Iop x Rs - V
Series resistance  Rs  - 4.0 6.0 Ω
Thermal resistance  Rth  - 60 - °C/W
Recommended case temperature  T c -20 - 30  °C


Absolute Maximum Ratings
Parameter Symbol Min. Typ. Max. Unit
Reverse voltage  Vrl  - - 3 V
Case operating temperature Top -20 - 50 °C
Storage temperature range Tstg -40 - 80 °C
Lead soldering temperature  Tis  - - 250 °C (5 sec.)

Monitor Photodiode
Parameter Symbol Min. Typ. Max. Unit
Sensitivity  - 0.1 - 20 µA/mW
Capacitance - - 6 - pF
Breakdown voltage Vbd  - 25 - V
Operating voltage Vop - 10 - V
 830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode

 
Description: 
 1. Small Package 5.6mm Diameter.
 
  2. Low astigmatism and high reliability.
 
  3. Cheap price high quality single mode 830nm 200mw infrared laser diode .
 
   4.   Package details: Plastic box package, it depends on different kinds of laser diodes with different sizes.Normally 100pcs in one tray, 10 trays in one bag ,then 10 bags in one carton box.
 
830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode

 
 

FAQ:
How to contact us ?
You can send messages to us on trademessenger directly, or send us a email. 
 
Shipping Policy:
1. Item will be sent out within 1-3 working days after the payment is cleared. 
2. it will be shipped by DHL/FedEx/UPS/TNT or other special way, please contact with us to choose the best one.
3. Most package will arrive within 3- 5 working days after it is sent out. 
   
 830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode
Warranty:
All products have been tested before the shipment and it was packaged in good condition. Please tested the products at first before you assemble it, if any problem here , please inform us within 3 days of receipt. We can arrange replacement for you if the situation is confirmed.
830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode
830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode
 
 830nm High Power Single-Mode 200MW 830nm Infrared Laser Diode


 

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Diamond Member Since 2015

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Management System Certification
ISO9001:2015
Terms of Payment
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