High Power Brand New 830nm 200MW Infrared Laser Diode

Product Details
Customization: Available
Certification: RoHS, CE, ISO
Application: Illumination, Printing, Sensing, Medical
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  • High Power Brand New 830nm 200MW Infrared Laser Diode
  • High Power Brand New 830nm 200MW Infrared Laser Diode
  • High Power Brand New 830nm 200MW Infrared Laser Diode
  • High Power Brand New 830nm 200MW Infrared Laser Diode
  • High Power Brand New 830nm 200MW Infrared Laser Diode
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Basic Info.

Model NO.
JLD830NM200MW
Structure
Through Hole
Wavelength
830nm
Optical Output Power
200MW Cw
Can Type
To18-5.6mm
Light Color
Infrared
Threshold Current
35mA Typ.
Life Time
10000 Hours
Reverse Voltage
3V
Operating Current
250mA
Operating Voltage
1.5V
Operating Temperature
-20~+50 Degree
Transport Package
Anti-Static Package
Specification
830nm 200mw laser diode
Trademark
JDSU
Origin
USA
HS Code
85414010
Production Capacity
10000PCS Per Day

Product Description

Features:
1.  200 mW kink-free power
2.  Narrow spectral width
3. High efficiency
High Power Brand New 830nm 200MW Infrared Laser Diode
High Power Brand New 830nm 200MW Infrared Laser Diode

Laser Characteristics
Parameter Symbol Min. Typ. Max. Unit
CW output power,kink-free  Po - - 200 w
Center wavelength λc  - 830 - nm
Spectral width  Δλ  - 3 5 nm
Slope efficiency ηD = P o/(Iop -Ith )  0.75 0.85 - mW/ mA
Conversion efficiency  η= P o /(Iop V op )  - 30 - %
Emitting dimensions  W x H  - 3 x 1 - µm
Beam Divergence Parallel to the junction θ// - 9 - degree
Beam Divergence Perpendicular to the junction θ⊥  - 30 - degree
Threshold Current Ith - 35 45 mA
Operating Current If - 250 350 mA
Operating Voltage Vop - Forward voltage is typically:Vf = 1.5 V + Iop x Rs - V
Series resistance  Rs  - 4.0 6.0 Ω
Thermal resistance  Rth  - 60 - °C/W
Recommended case temperature  T c -20 - 30  °C


Absolute Maximum Ratings
Parameter Symbol Min. Typ. Max. Unit
Reverse voltage  Vrl  - - 3 V
Case operating temperature Top -20 - 50 °C
Storage temperature range Tstg -40 - 80 °C
Lead soldering temperature  Tis  - - 250 °C (5 sec.)

Monitor Photodiode
Parameter Symbol Min. Typ. Max. Unit
Sensitivity  - 0.1 - 20 µA/mW
Capacitance - - 6 - pF
Breakdown voltage Vbd  - 25 - V
Operating voltage Vop - 10 - V
 High Power Brand New 830nm 200MW Infrared Laser Diode

 
Description: 
 1. Small Package 5.6mm Diameter.
 
  2. Low astigmatism and high reliability.
 
  3. Cheap price high quality single mode 830nm 200mw infrared laser diode .
 
   4.   Package details: Plastic box package, it depends on different kinds of laser diodes with different sizes.Normally 100pcs in one tray, 10 trays in one bag ,then 10 bags in one carton box.
 

High Power Brand New 830nm 200MW Infrared Laser Diode

 
 



FAQ:
How to contact us ?
You can send messages to us on trademessenger directly, or send us a email. 
 
Shipping Policy:
1. Item will be sent out within 1-3 working days after the payment is cleared. 
2. it will be shipped by DHL/FedEx/UPS/TNT or other special way, please contact with us to choose the best one.
3. Most package will arrive within 3- 5 working days after it is sent out. 
   
 
Warranty:
All products have been tested before the shipment and it was packaged in good condition. Please tested the products at first before you assemble it, if any problem here , please inform us within 3 days of receipt. We can arrange replacement for you if the situation is confirmed.
High Power Brand New 830nm 200MW Infrared Laser Diode
High Power Brand New 830nm 200MW Infrared Laser Diode

High Power Brand New 830nm 200MW Infrared Laser Diode

 

 

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