500MW 808nm Infrared High Power Laser Diode

Product Details
Customization: Available
Application: Diode, Medical Use, Material Processes, Measurement
Batch Number: 2010+
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  • 500MW 808nm Infrared High Power Laser Diode
  • 500MW 808nm Infrared High Power Laser Diode
  • 500MW 808nm Infrared High Power Laser Diode
  • 500MW 808nm Infrared High Power Laser Diode
  • 500MW 808nm Infrared High Power Laser Diode
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Basic Info.

Model NO.
JLD808NM500MW
Manufacturing Technology
Optoelectronic Semiconductor
Material
Element Semiconductor
Model
Jld808-500MW
Package
Through Hole
Signal Processing
Simulation
Type
Laser Diode
Wavelength
805nm~811nm
Optical Output Power
500MW Cw
Can Type
To18-5.6mm
Light Color
Infrared
Threshold Current
50mA Typ.
Life Time
10000 Hours
Reverse Voltage
2V
Operating Current
500mA
Operating Voltage
1.8V
Operating Temperature
-10~+65 Degree
Brand
Bu
Transport Package
Anti-Static Package
Specification
808nm 500mw laser diode
Trademark
BU
Origin
Duangdong, China
HS Code
85414010
Production Capacity
10000PCS Per Day

Product Description

Features:
1. Optical power output: 500mw (CW)
2. Wavelength: TYP.808nm
3. φ5.6mm package
Infrared  808nm 500mw High Power Laser Diode
500MW 808nm Infrared High Power Laser Diode

Absolute Maximum Ratings    (Tc=25ºC)
Parameter Symbol Ratings Unit
Optical Output Power Po(CW) 500 mW
Reverse Voltage Vr  2 V
Operating Temperature Top -10~40 ºC
Storage Temperature Tstg -40~+80 ºC

Electrical/Optical Characteristics ( Tc=25ºC)
Parameter    Symbols   Conditions   Min   Typ   Max  Units
Threshold Current      Ith       -    -   50   70   mA
Operating Current      Iop   Po=500mW    -   500   600   mA
Operating Voltage      Vop   Po=500mW    -   1.8   2.1  Volts
Slope
Efficiency
 
     η
-  
  0.8
 
  1.0
 
  -
 
mW/mA
    -        
Beam Divergence
(FWHM)
Parallel     θ   Po=500mW    9    12   15   deg
  Perpendicular     θ⊥   Po=500mW    28    30   35   deg
Parallel Deviation Angle    θ   Po=500mW    -3    -    3   deg
Perpendicular Deviation Angle    θ⊥   Po=500mW   -3    -    3   deg
Emission Point Accuracy  X,Y,Z   Po=500mW   -80 - 80   um
Lasing Wavelength      λp   Po=500mW   805   808   811   nm

Description: 
 1. Small Package 5.6mm Diameter.
 
  2. High power 808nm infrared IR laser diode 500mw.
 
  3. Cheap price high quality 808nm 500mw infrared laser diode .
 
   4.   Package details: Plastic box package, it depends on different kinds of laser diodes with different sizes.Normally 100pcs in one tray, 10 trays in one bag ,then 10 bags in one carton box.
 500MW 808nm Infrared High Power Laser Diode
FAQ:
How to contact us ?
You can send messages to us on trademessenger directly, or send us a email. 
 
Shipping Policy:
1. Item will be sent out within 1-3 working days after the payment is cleared. 
2. it will be shipped by DHL/FedEx/UPS/TNT or other special way, please contact with us to choose the best one.
3. Most package will arrive within 3- 5 working days after it is sent out. 
   
 
Warranty:
All products have been tested before the shipment and it was packaged in good condition. Please tested the products at first before you assemble it, if any problem here , please inform us within 3 days of receipt. We can arrange replacement for you if the situation is confirmed.
500MW 808nm Infrared High Power Laser Diode
500MW 808nm Infrared High Power Laser Diode
500MW 808nm Infrared High Power Laser Diode

500MW 808nm Infrared High Power Laser Diode

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